2SA2039-H
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | 2SA2039/2SC5706 |
| Description | Bipolar (BJT) Transistor PNP 50V 5A 360MHz 800mW Through Hole TP |
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مشخصات 2SA2039-H
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2SA2039-H
- Transistor Type PNP
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 800mW
- Transition Frequency (fT) 360MHz
- DC Current Gain (hFE@Ic,Vce) 200@500mA,2V
- Collector Cut-Off Current (Icbo) 1uA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 430mV@100mA,2A
- Package -
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Not For New Designs
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 430mV @ 100mA, 2A
- Current - Collector Cutoff (Max) 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
- Power - Max 800mW
- Frequency - Transition 360MHz
- Operating Temperature -
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package TP
- Base Part Number 2SA2039
- detail Bipolar (BJT) Transistor PNP 50V 5A 360MHz 800mW Through Hole TP
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