FQAF13N80

FQAF13N80

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مشخصات فنی:
Manufacturer onsemi
Package TO-3P-3 Full Pack
Datasheet FQAF13N80
Description N-Channel 800V 8A (Tc) 120W (Tc) Through Hole TO-3PF

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi FQAF13N80
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 120W
  • Total Gate Charge (Qg@Vgs) 88nC@10V
  • Drain Source Voltage (Vdss) 800V
  • Input Capacitance (Ciss@Vds) 3500pF@25V
  • Continuous Drain Current (Id) 8A
  • Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 750mΩ@4A,10V
  • Package TO-3PF
  • Manufacturer onsemi
  • Series QFET®
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 800V
  • Current - Continuous Drain (Id) @ 25°C 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 750mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 120W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-3PF
  • Package / Case TO-3P-3 Full Pack
  • Base Part Number FQAF1
  • detail N-Channel 800V 8A (Tc) 120W (Tc) Through Hole TO-3PF

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