NTLJS2103PTBG
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| Manufacturer | onsemi |
| Package | 6-WDFN Exposed Pad |
| Datasheet | NTLJS2103P |
| Description | P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2) |
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تغییرات قیمت
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTLJS2103PTBG
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 700mW
- Total Gate Charge (Qg@Vgs) 15nC@4.5V
- Drain Source Voltage (Vdss) 12V
- Input Capacitance (Ciss@Vds) 1157pF@6V
- Continuous Drain Current (Id) 3.5A
- Gate Threshold Voltage (Vgs(th)@Id) 800mV@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 40mΩ@4.5V,3A
- Package DFN-6(2x2)
- Manufacturer onsemi
- Series µCool™
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 12V
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 1157pF @ 6V
- FET Feature -
- Power Dissipation (Max) 700mW (Ta)
- Mounting Type Surface Mount
- Supplier Device Package 6-WDFN (2x2)
- Package / Case 6-WDFN Exposed Pad
- Base Part Number NTLJS21
- detail P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
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