FGA40T65SHD

FGA40T65SHD

FGA40T65SHD

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مشخصات فنی:
Manufacturer onsemi
Package TO-3P-3, SC-65-3
Datasheet FGA40T65SHD
Description IGBT Trench Field Stop 650V 80A 268W Through Hole TO-3PN

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مشخصات

  • RoHS true
  • Type Trench Field Stop
  • Category Triode/MOS Tube/Transistor/IGBTs
  • Datasheet onsemi FGA40T65SHD
  • Operating Temperature -55°C~+175°C@(Tj)
  • Collector Current (Ic) 80A
  • Power Dissipation (Pd) 268W
  • Input Capacitance (Cies@Vce) -
  • Turn?on Switching Loss (Eon) 1.01mJ
  • Pulsed Collector Current (Icm) 120A
  • Turn?off Switching Loss (Eoff) 0.297mJ
  • Diode Reverse Recovery Time (Trr) 31.8ns
  • Collector-Emitter Breakdown Voltage (Vces) 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
  • Package TO-3P
  • Manufacturer onsemi
  • Series -
  • Packaging Tube
  • Part Status Active
  • IGBT Type Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) 650V
  • Current - Collector (Ic) (Max) 80A
  • Current - Collector Pulsed (Icm) 120A
  • Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
  • Power - Max 268W
  • Switching Energy 1.01mJ (on), 297µJ (off)
  • Input Type Standard
  • Gate Charge 72.2nC
  • Td (on/off) @ 25°C 19.2ns/65.6ns
  • Test Condition 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr) 31.8ns
  • Mounting Type Through Hole
  • Package / Case TO-3P-3, SC-65-3
  • Supplier Device Package TO-3PN
  • Base Part Number FGA40
  • detail IGBT Trench Field Stop 650V 80A 268W Through Hole TO-3PN

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