FJN3303FTA
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | FJN3303F |
| Description | Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 650mW Through Hole TO-92-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi FJN3303FTA
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 1.1W
- Transition Frequency (fT) 4MHz
- DC Current Gain (hFE@Ic,Vce) 14@500mA,2V
- Collector Cut-Off Current (Icbo) 10uA
- Collector-Emitter Breakdown Voltage (Vceo) 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 3V@1.5A,500mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 1.5A
- Voltage - Collector Emitter Breakdown (Max) 400V
- Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
- Current - Collector Cutoff (Max) 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA, 2V
- Power - Max 650mW
- Frequency - Transition 4MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number FJN330
- detail Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 650mW Through Hole TO-92-3
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