FDP023N08B-F102
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FDP023N08B_F102 |
| Description | N-Channel 75V 120A (Tc) 245W (Tc) Through Hole TO-220-3 |
فروشنده های FDP023N08B-F102
فروشگاهی یافت نشد
مشخصات FDP023N08B-F102
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDP023N08B-F102
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 245W
- Total Gate Charge (Qg@Vgs) 195nC@10V
- Drain Source Voltage (Vdss) 75V
- Input Capacitance (Ciss@Vds) 13765pF@37.5V
- Continuous Drain Current (Id) 120A
- Gate Threshold Voltage (Vgs(th)@Id) 3.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.35mΩ@75A,10V
- Package TO-220
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 75V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.35mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 13765pF @ 37.5V
- FET Feature -
- Power Dissipation (Max) 245W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FDP023
- detail N-Channel 75V 120A (Tc) 245W (Tc) Through Hole TO-220-3
فروشنده های FDP023N08B-F102
فروشگاهی یافت نشد
