BD680G

BD680G

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مشخصات فنی:
Manufacturer onsemi
Package TO-225AA, TO-126-3
Datasheet BD676(A), 78(A), 80(A), 82(T)
Description Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-225AA

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مشخصات BD680G

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Darlington Transistors
  • Datasheet onsemi BD680G
  • Transistor Type PNP
  • Operating Temperature -55°C~+150°C@(Tj)
  • Collector Current (Ic) 4A
  • Power Dissipation (Pd) 40W
  • Transition frequency (fT) -
  • DC current gain (hFE@Vce,Ic) 750@3V,1.5A
  • Collector-emitter voltage (Vceo) 80V
  • Collector cut-off current (Icbo@Vcb) 500uA
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 2.5V@1.5A,30mA
  • Package TO-225
  • Manufacturer onsemi
  • Series -
  • Packaging Bulk
  • Part Status Active
  • Current - Collector (Ic) (Max) 4A
  • Voltage - Collector Emitter Breakdown (Max) 80V
  • Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max) 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
  • Power - Max 40W
  • Frequency - Transition -
  • Mounting Type Through Hole
  • Package / Case TO-225AA, TO-126-3
  • Supplier Device Package TO-225AA
  • Base Part Number BD680
  • detail Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-225AA

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