FCU900N60Z
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| Manufacturer | onsemi |
| Package | TO-251-3 Stub Leads, IPak |
| Datasheet | FCU900N60Z |
| Description | N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-PAK |
فروشنده های FCU900N60Z
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مشخصات FCU900N60Z
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FCU900N60Z
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) -
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) -
- Package DPAK-3
- Manufacturer onsemi
- Series SuperFET® II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 900mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
- FET Feature -
- Power Dissipation (Max) 52W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Stub Leads, IPak
- Base Part Number FCU900
- detail N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-PAK
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