NVTFS6H854NTAG

NVTFS6H854NTAG

NVTFS6H854NTAG

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مشخصات فنی:
Manufacturer onsemi
Package 8-PowerWDFN
Datasheet NVTFS6H854N
Description N-Channel 80V 9.5A (Ta), 44A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NVTFS6H854NTAG
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 3.2W;68W
  • Total Gate Charge (Qg@Vgs) 13nC@10V
  • Drain Source Voltage (Vdss) 80V
  • Input Capacitance (Ciss@Vds) 770pF@40V
  • Continuous Drain Current (Id) 9.5A;44A
  • Gate Threshold Voltage (Vgs(th)@Id) 4V@45uA
  • Reverse Transfer Capacitance (Crss@Vds) 5.4pF@40V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 11.9mΩ@10V,10A
  • Package DFN-8(3x3)
  • Manufacturer onsemi
  • Series Automotive, AEC-Q101
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 80V
  • Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 14.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id 4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V
  • FET Feature -
  • Power Dissipation (Max) 3.2W (Ta), 68W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-WDFN (3.3x3.3)
  • Package / Case 8-PowerWDFN
  • Base Part Number NVTFS6
  • detail N-Channel 80V 9.5A (Ta), 44A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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