MUN5214DW1T1G
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| Manufacturer | onsemi |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Datasheet | MUN5214DW1, NSBC114YDxx |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
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مشخصات MUN5214DW1T1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet onsemi MUN5214DW1T1G
- Transistor Type 2 NPN - Pre-Biased
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 250mW
- DC Current Gain (hFE@Ic,Vce) 80@5mA,10V
- Collector Cut-Off Current (Icbo) 500nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@300uA,10mA
- Package SOT-363
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Resistor - Base (R1) 10kOhms
- Resistor - Emitter Base (R2) 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) 500nA
- Frequency - Transition -
- Power - Max 250mW
- Mounting Type Surface Mount
- Package / Case 6-TSSOP, SC-88, SOT-363
- Supplier Device Package SC-88/SC70-6/SOT-363
- Base Part Number MUN52
- detail Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
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