NTHL160N120SC1

NTHL160N120SC1

1.2kV 17A 162mΩ@20V,12A 119W N Channel TO-247 MOSFETs ROHS

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مشخصات فنی:
Manufacturer onsemi
Package TO-247-3 Variant
Datasheet NTHL160N120SC1
Description N-Channel 1200V 17A (Tc) 119W (Tc) Through Hole TO-247-3

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NTHL160N120SC1
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 119W
  • Total Gate Charge (Qg@Vgs) 34nC@-5V/20V
  • Drain Source Voltage (Vdss) 1.2kV
  • Input Capacitance (Ciss@Vds) 665pF@800V
  • Continuous Drain Current (Id) 17A
  • Gate Threshold Voltage (Vgs(th)@Id) 3.1V@2.5mA
  • Reverse Transfer Capacitance (Crss@Vds) 5pF@800V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 162mΩ@20V,12A
  • Package TO-247
  • Manufacturer onsemi
  • Series -
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss) 1200V
  • Current - Continuous Drain (Id) @ 25°C 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Rds On (Max) @ Id, Vgs 224mOhm @ 12A, 20V
  • Vgs(th) (Max) @ Id 4.3V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs 34nC @ 20V
  • Vgs (Max) +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds 665pF @ 800V
  • FET Feature -
  • Power Dissipation (Max) 119W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-247-3
  • Package / Case TO-247-3 Variant
  • detail N-Channel 1200V 17A (Tc) 119W (Tc) Through Hole TO-247-3

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