FDMA291P
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| Manufacturer | onsemi |
| Package | 6-VDFN Exposed Pad |
| Datasheet | FDMA291P |
| Description | P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2) |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDMA291P
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.4W
- Total Gate Charge (Qg@Vgs) 14nC@4.5V
- Input Capacitance (Ciss@Vds) 1000pF@10V
- Continuous Drain Current (Id) 6.6A
- Gate Threshold Voltage (Vgs(th)@Id) 1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 42mΩ@6.6A,4.5V
- Package WDFN-6
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 6.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs 42mOhm @ 6.6A, 4.5V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
- FET Feature -
- Power Dissipation (Max) 2.4W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package 6-MicroFET (2x2)
- Package / Case 6-VDFN Exposed Pad
- Base Part Number FDMA29
- detail P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
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