HUF76609D3ST

HUF76609D3ST

HUF76609D3ST

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مشخصات فنی:
Manufacturer onsemi
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet HUF76609D3S
Description N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi HUF76609D3ST
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 49W
  • Total Gate Charge (Qg@Vgs) 16nC@10V
  • Drain Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss@Vds) 425pF@25V
  • Continuous Drain Current (Id) 10A
  • Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 160mΩ@10A,10V
  • Package TO-252AA
  • Manufacturer onsemi
  • Series UltraFET™
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
  • Vgs (Max) ±16V
  • Input Capacitance (Ciss) (Max) @ Vds 425pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 49W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package TO-252AA
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number HUF76
  • detail N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA

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