NSV1C301ET4G-VF01
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | NSV1C301ET4G |
| Description | Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK |
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مشخصات NSV1C301ET4G-VF01
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NSV1C301ET4G-VF01
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 2.1W
- Transition Frequency (fT) 120MHz
- DC Current Gain (hFE@Ic,Vce) 120@1A,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 115mV@3A,300mA
- Package TO-252
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- Current - Collector (Ic) (Max) 3A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 300mA, 3A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
- Power - Max 2.1W
- Frequency - Transition 120MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number NSV1C3
- detail Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK
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