NVF6P02T3G
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| Manufacturer | onsemi |
| Package | TO-261-4, TO-261AA |
| Datasheet | NTF6P02, NVF6P02 |
| Description | P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223 (TO-261) |
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تغییرات قیمت
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NVF6P02T3G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 8.3W
- Total Gate Charge (Qg@Vgs) 20nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 1200pF@16V
- Continuous Drain Current (Id) 10A
- Gate Threshold Voltage (Vgs(th)@Id) 1V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 110pF@10V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 44mΩ@4.5V,6A
- Package SOT-223
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Cut Tape (CT)
- Part Status Not For New Designs
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs 50mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 16V
- FET Feature -
- Power Dissipation (Max) 8.3W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223 (TO-261)
- Package / Case TO-261-4, TO-261AA
- Base Part Number NVF6P0
- detail P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223 (TO-261)
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