NTMS4916NR2G

NTMS4916NR2G

NTMS4916NR2G

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مشخصات فنی:
Manufacturer onsemi
Package 8-SOIC (0.154", 3.90mm Width)
Datasheet NTMS4916N
Description N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NTMS4916NR2G
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 890mW
  • Total Gate Charge (Qg@Vgs) 15nC@4.5V
  • Drain Source Voltage (Vdss) 30V
  • Input Capacitance (Ciss@Vds) 1376pF@25V
  • Continuous Drain Current (Id) 7.8A
  • Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 9mΩ@12A,10V
  • Package SOP-8
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 7.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 1376pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 890mW (Ta)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-SOIC
  • Package / Case 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number NTMS49
  • detail N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC

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