NVTFWS014P04M8LTAG

NVTFWS014P04M8LTAG

NVTFWS014P04M8LTAG

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Manufacturer onsemi
Package 8-PowerWDFN
Datasheet NVTFS014P04M8L
Description P-Channel 40V 11.3A (Ta), 49A (Tc) 3.2W (Ta), 61W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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مشخصات

  • RoHS true
  • Type P Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NVTFWS014P04M8LTAG
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 3.2W;61W
  • Total Gate Charge (Qg@Vgs) 26.5nC@10V
  • Drain Source Voltage (Vdss) 40V
  • Input Capacitance (Ciss@Vds) 1734pF@20V
  • Continuous Drain Current (Id) 11.3A;49A
  • Gate Threshold Voltage (Vgs(th)@Id) 2.4V@420uA
  • Reverse Transfer Capacitance (Crss@Vds) 32pF@20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 10mΩ@10V,15A
  • Package WDFN-8
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 40V
  • Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id 2.4V @ 420µA
  • Gate Charge (Qg) (Max) @ Vgs 26.5nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 1734pF @ 20V
  • FET Feature -
  • Power Dissipation (Max) 3.2W (Ta), 61W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-WDFN (3.3x3.3)
  • Package / Case 8-PowerWDFN
  • Base Part Number NVTFWS
  • detail P-Channel 40V 11.3A (Ta), 49A (Tc) 3.2W (Ta), 61W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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