FCH125N65S3R0-F155
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| Manufacturer | ON Semiconductor |
| Package | TO-247-3 |
| Datasheet | FCH125N65S3R0-F155 |
| Description | N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-247-3 |
فروشنده های FCH125N65S3R0-F155
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مشخصات FCH125N65S3R0-F155
- Manufacturer ON Semiconductor
- Series SuperFET® III
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1940pF @ 400V
- FET Feature -
- Power Dissipation (Max) 181W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Package / Case TO-247-3
- Base Part Number FCH12
- detail N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-247-3
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