MJE371G

MJE371G

MJE371G

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مشخصات فنی:
Manufacturer onsemi
Package TO-225AA, TO-126-3
Datasheet MJE371
Description Bipolar (BJT) Transistor PNP 40V 4A 40W Through Hole TO-225AA

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi MJE371G
  • Transistor Type PNP
  • Operating Temperature -65°C~+150°C@(Tj)
  • Collector Current (Ic) 4A
  • Power Dissipation (Pd) 40W
  • Transition Frequency (fT) -
  • DC Current Gain (hFE@Ic,Vce) 40@1A,1V
  • Collector Cut-Off Current (Icbo) 100uA
  • Collector-Emitter Breakdown Voltage (Vceo) 40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
  • Package TO-225
  • Manufacturer onsemi
  • Series -
  • Packaging Bulk
  • Part Status Obsolete
  • Current - Collector (Ic) (Max) 4A
  • Voltage - Collector Emitter Breakdown (Max) 40V
  • Vce Saturation (Max) @ Ib, Ic -
  • Current - Collector Cutoff (Max) 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 1V
  • Power - Max 40W
  • Frequency - Transition -
  • Mounting Type Through Hole
  • Package / Case TO-225AA, TO-126-3
  • Supplier Device Package TO-225AA
  • Base Part Number MJE37
  • detail Bipolar (BJT) Transistor PNP 40V 4A 40W Through Hole TO-225AA

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