FDD2670
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FDD2670 |
| Description | N-Channel 200V 3.6A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDD2670
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 3.2W;70W
- Total Gate Charge (Qg@Vgs) 43nC@10V
- Drain Source Voltage (Vdss) 200V
- Input Capacitance (Ciss@Vds) 1228pF@100V
- Continuous Drain Current (Id) 3.6A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 130mΩ@3.6A,10V
- Package TO-252
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 130mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1228pF @ 100V
- FET Feature -
- Power Dissipation (Max) 3.2W (Ta), 70W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package TO-252
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FDD267
- detail N-Channel 200V 3.6A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252
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