TIP147G
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | TIP140-142,145-147 |
| Description | Bipolar (BJT) Transistor PNP - Darlington 100V 10A 125W Through Hole TO-247-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi TIP147G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 10A
- Power Dissipation (Pd) 125W
- Transition frequency (fT) -
- DC current gain (hFE@Vce,Ic) 1000@4V,5A
- Collector-emitter voltage (Vceo) 100V
- Collector cut-off current (Icbo@Vcb) 2mA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 3V@10A,40mA
- Package TO-247S
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 10A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 10A
- Current - Collector Cutoff (Max) 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V
- Power - Max 125W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Base Part Number TIP147
- detail Bipolar (BJT) Transistor PNP - Darlington 100V 10A 125W Through Hole TO-247-3
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