MJD31C1G
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | MJD31 (NPN), MJD32 (PNP) |
| Description | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK |
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مشخصات MJD31C1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJD31C1G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 15W
- Transition Frequency (fT) 3MHz
- DC Current Gain (hFE@Ic,Vce) 10@3A,4V
- Collector Cut-Off Current (Icbo) 50uA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.2V@3A,375mA
- Package IPAK
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 3A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max) 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V
- Power - Max 1.56W
- Frequency - Transition 3MHz
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package I-PAK
- Base Part Number MJD31
- detail Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
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