FQP12N60C
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | TO220B03 Pkg Drawing |
| Description | N-Channel 600V 10.5A (Tc) 180W (Tc) Through Hole TO-220-3 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQP12N60C
- Package TO-220
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 700mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
- FET Feature -
- Power Dissipation (Max) 180W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP1
- detail N-Channel 600V 10.5A (Tc) 180W (Tc) Through Hole TO-220-3
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