HGTG5N120BND
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | HGTG5N120BND, HGTP5N120BND |
| Description | IGBT NPT 1200V 21A 167W Through Hole TO-247-3 |
فروشنده های HGTG5N120BND
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تغییرات قیمت
مشخصات HGTG5N120BND
- RoHS true
- Type NPT
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi HGTG5N120BND
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 21A
- Power Dissipation (Pd) 167W
- Turn?on Delay Time (Td(on)) 22ns
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) 0.45mJ
- Total Gate Charge (Qg@Ic,Vge) 53nC
- Turn?off Delay Time (Td(off)) 160ns
- Pulsed Collector Current (Icm) 40A
- Turn?off Switching Loss (Eoff) 0.39mJ
- Diode Reverse Recovery Time (Trr) 65ns
- Collector-Emitter Breakdown Voltage (Vces) 1200V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.7V@15V,5A
- Package TO-247
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Not For New Designs
- IGBT Type NPT
- Voltage - Collector Emitter Breakdown (Max) 1200V
- Current - Collector (Ic) (Max) 21A
- Current - Collector Pulsed (Icm) 40A
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A
- Power - Max 167W
- Switching Energy 450µJ (on), 390µJ (off)
- Input Type Standard
- Gate Charge 53nC
- Td (on/off) @ 25°C 22ns/160ns
- Test Condition 960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr) 65ns
- Mounting Type Through Hole
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Base Part Number HGTG5N120
- detail IGBT NPT 1200V 21A 167W Through Hole TO-247-3
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