BD244CTU
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | BD243B/C, BD244B/C |
| Description | Bipolar (BJT) Transistor PNP 100V 6A 65W Through Hole TO-220-3 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Transistor Type PNP
- Collector Current (Ic) 6A
- Power Dissipation (Pd) 65W
- DC Current Gain (hFE@Ic,Vce) 15@3A,4V
- Collector Cut-Off Current (Icbo) 700uA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.5V@1A,6A
- Package TO-220-3
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 6A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
- Current - Collector Cutoff (Max) 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V
- Power - Max 65W
- Frequency - Transition -
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number BD244
- detail Bipolar (BJT) Transistor PNP 100V 6A 65W Through Hole TO-220-3
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