2SB1122S-TD-E
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| Manufacturer | onsemi |
| Package | TO-243AA |
| Datasheet | 2SB1122/2SD1622 |
| Description | Bipolar (BJT) Transistor PNP 50V 1A 150MHz 500mW Surface Mount PCP |
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مشخصات 2SB1122S-TD-E
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2SB1122S-TD-E
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 1.3W
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 100@100mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 180mV@500mA,50mA
- Package SOT-89
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 2V
- Power - Max 500mW
- Frequency - Transition 150MHz
- Mounting Type Surface Mount
- Package / Case TO-243AA
- Supplier Device Package PCP
- Base Part Number 2SB1122
- detail Bipolar (BJT) Transistor PNP 50V 1A 150MHz 500mW Surface Mount PCP
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