2SD1801S-E
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | 2SB1201S/2SD1801 |
| Description | Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Through Hole TP |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2SD1801S-E
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 2A
- Power Dissipation (Pd) 800mW
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 140@100mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 150mV@1A,50mA
- Package TO-251
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
- Power - Max 800mW
- Frequency - Transition 150MHz
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package TP
- Base Part Number 2SD1801
- detail Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Through Hole TP
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