FDB86102LZ

FDB86102LZ

FDB86102LZ

در 0 فروشگاه

قیمت هنوز مشخص نشده است

این محصول در حال حاضر فروشنده ای ندارد!

مشخصات فنی:
Manufacturer onsemi
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet FDB86102LZ
Description N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB

sellers FDB86102LZ

فروشگاهی یافت نشد

پالت

تغییرات قیمت

پالت

مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi FDB86102LZ
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 3.1W
  • Total Gate Charge (Qg@Vgs) 7.6nC@0~4.5V
  • Drain Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss@Vds) 959pF@50V
  • Continuous Drain Current (Id) 8.3A;30A
  • Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) 9pF@450V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 18mΩ@10V,8.3A
  • Package TO-263AB
  • Manufacturer onsemi
  • Series PowerTrench®
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 24mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 1275pF @ 50V
  • FET Feature -
  • Power Dissipation (Max) 3.1W (Ta)
  • Mounting Type Surface Mount
  • Supplier Device Package TO-263AB
  • Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number FDB861
  • detail N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB

فروشنده ها

فروشگاهی یافت نشد

محصولات مشابه