MJD117-1G
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | MJD112,117 |
| Description | Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK |
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مشخصات MJD117-1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi MJD117-1G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 2A
- Power Dissipation (Pd) 1.75W
- Transition frequency (fT) 25MHz
- DC current gain (hFE@Vce,Ic) 1000@3V,2A
- Collector-emitter voltage (Vceo) 100V
- Collector cut-off current (Icbo@Vcb) 20uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 3V@4A,40mA
- Package DPAK-3
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
- Current - Collector Cutoff (Max) 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
- Power - Max 1.75W
- Frequency - Transition 25MHz
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package I-PAK
- Base Part Number MJD11
- detail Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
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