FQP55N10
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FQP55N10 |
| Description | N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQP55N10
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 155W
- Total Gate Charge (Qg@Vgs) 98nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 2730pF@25V
- Continuous Drain Current (Id) 55A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 26mΩ@27.5A,10V
- Package TO-220
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 26mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V
- FET Feature -
- Power Dissipation (Max) 155W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP5
- detail N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3
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