2N5550TFR
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | 2N5550-51 |
| Description | Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2N5550TFR
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 60@10mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 140V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@50mA,5mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Current - Collector (Ic) (Max) 600mA
- Voltage - Collector Emitter Breakdown (Max) 140V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
- Power - Max 625mW
- Frequency - Transition 300MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number 2N5550
- detail Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3
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