NTMD3P03R2G
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| Manufacturer | onsemi |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | N(T,V)MD3P03 |
| Description | Mosfet Array 2 P-Channel (Dual) 30V 2.34A 730mW Surface Mount 8-SOIC |
sellers NTMD3P03R2G
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تغییرات قیمت
مشخصات
- RoHS true
- Type 2 P-Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTMD3P03R2G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 730mW
- Total Gate Charge (Qg@Vgs) 25nC@10V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 750pF@24V
- Continuous Drain Current (Id) 2.34A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 85mΩ@10V,3.05A
- Package SOP-8
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type 2 P-Channel (Dual)
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 2.34A
- Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 750pF @ 24V
- Power - Max 730mW
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package 8-SOIC
- Base Part Number NTMD3P
- detail Mosfet Array 2 P-Channel (Dual) 30V 2.34A 730mW Surface Mount 8-SOIC
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