EMF18XV6T5G

EMF18XV6T5G

1 NPN - Pre-Biased,1 PNP 500mW 100mA 500nA SOT-563 Digital Transistors ROHS

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مشخصات فنی:
Manufacturer onsemi
Package SOT-563, SOT-666
Datasheet EMF18XV6T5
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA 140MHz 500mW Surface Mount SOT-563

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet onsemi EMF18XV6T5G
  • Transistor Type 1 NPN - Pre-Biased,1 PNP
  • Collector Current (Ic) 100mA
  • Power Dissipation (Pd) 500mW
  • Transition Frequency (fT) 140MHz
  • DC Current Gain (hFE@Ic,Vce) 80@5mA,10V;120@1mA,6V
  • Collector Cut-Off Current (Icbo) 500nA
  • Collector-Emitter Breakdown Voltage (Vceo) 50V;60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@10mA,300uA;500mV@50mA,5mA
  • Package SOT-563
  • Manufacturer onsemi
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Current - Collector (Ic) (Max) 100mA
  • Voltage - Collector Emitter Breakdown (Max) 50V, 60V
  • Resistor - Base (R1) 47kOhms
  • Resistor - Emitter Base (R2) 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 120 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max) 500nA
  • Frequency - Transition 140MHz
  • Power - Max 500mW
  • Mounting Type Surface Mount
  • Package / Case SOT-563, SOT-666
  • Supplier Device Package SOT-563
  • Base Part Number EMF18X
  • detail Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA 140MHz 500mW Surface Mount SOT-563

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