2SB1205S-E
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| Manufacturer | ON Semiconductor |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | 2SB1205 |
| Description | Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Active
- Transistor Type PNP
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 20V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max) 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 2V
- Power - Max 1W
- Frequency - Transition 320MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package TP
- Base Part Number 2SB1205
- detail Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP
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