NSVF6003SB6T1G

NSVF6003SB6T1G

12V 800mW 100@50mA,5V 150mA NPN SOT-23-6 Bipolar Transistors - BJT ROHS

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مشخصات فنی:
Manufacturer onsemi
Package SOT-23-6 Thin, TSOT-23-6
Datasheet NSVF6003SB6
Description RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi NSVF6003SB6T1G
  • Transistor Type NPN
  • Operating Temperature -55°C~+150°C@(Tj)
  • Collector Current (Ic) 150mA
  • Power Dissipation (Pd) 800mW
  • Transition Frequency (fT) 7GHz
  • DC Current Gain (hFE@Ic,Vce) 100@50mA,5V
  • Collector Cut-Off Current (Icbo) 1uA
  • Collector-Emitter Breakdown Voltage (Vceo) 12V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
  • Package SOT-23-6
  • Manufacturer onsemi
  • Series Automotive, AEC-Q101
  • Packaging Cut Tape (CT)
  • Part Status Discontinued at Digi-Key
  • Voltage - Collector Emitter Breakdown (Max) 12V
  • Frequency - Transition 7GHz
  • Noise Figure (dB Typ @ f) 3dB @ 1GHz
  • Gain 9dB
  • Power - Max 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max) 150mA
  • Mounting Type Surface Mount
  • Package / Case SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package 6-CPH
  • Base Part Number NSVF60
  • detail RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH

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