FDFMA2P029Z-F106
null 3.1A 95mΩ@3.1A,4.5V 1.4W P Channel WDFN-6 MOSFETs ROHS
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| Manufacturer | onsemi |
| Package | 6-VDFN Exposed Pad |
| Datasheet | FDFMA2P029Z |
| Description | P-Channel 20V 3.1A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2) |
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مشخصات FDFMA2P029Z-F106
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDFMA2P029Z-F106
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1.4W
- Total Gate Charge (Qg@Vgs) 10nC@4.5V
- Input Capacitance (Ciss@Vds) 720pF@10V
- Continuous Drain Current (Id) 3.1A
- Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 95mΩ@3.1A,4.5V
- Package WDFN-6
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs 95mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
- Vgs (Max) ±12V
- Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V
- FET Feature Schottky Diode (Isolated)
- Power Dissipation (Max) 1.4W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package 6-MicroFET (2x2)
- Package / Case 6-VDFN Exposed Pad
- Base Part Number FDFMA2
- detail P-Channel 20V 3.1A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2)
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