FJP5304DTU

400V 70W 8@2A,5V 4A NPN (Triple Diffused Planar Silicon Transistor) TO-220 Bipolar Transistors - BJT ROHS

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مشخصات فنی:
Manufacturer onsemi
Package TO-220-3
Datasheet FJP5304D
Description Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi FJP5304DTU
  • Transistor Type NPN (Triple Diffused Planar Silicon Transistor)
  • Operating Temperature -65°C~+150°C@(Tj)
  • Collector Current (Ic) 4A
  • Power Dissipation (Pd) 70W
  • Transition Frequency (fT) -
  • DC Current Gain (hFE@Ic,Vce) 8@2A,5V
  • Collector Cut-Off Current (Icbo) -
  • Collector-Emitter Breakdown Voltage (Vceo) 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.5V@2.5A,500mA
  • Package TO-220
  • Manufacturer onsemi
  • Series -
  • Packaging Bulk
  • Part Status Obsolete
  • Current - Collector (Ic) (Max) 4A
  • Voltage - Collector Emitter Breakdown (Max) 400V
  • Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 2.5A
  • Current - Collector Cutoff (Max) 250mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A, 5V
  • Power - Max 70W
  • Frequency - Transition -
  • Mounting Type Through Hole
  • Package / Case TO-220-3
  • Supplier Device Package TO-220-3
  • Base Part Number FJP530
  • detail Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

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