FQD2N60CTM-WS
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| Manufacturer | ON Semiconductor |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD2N60C, FQU2N60C |
| Description | N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak |
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مشخصات FQD2N60CTM-WS
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Discontinued at Digi-Key
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD2
- detail N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
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