NVMFS5113PLWFT1G
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| Manufacturer | onsemi |
| Package | 8-PowerTDFN, 5 Leads |
| Datasheet | NVMFS5113PL |
| Description | P-Channel 60V 10A (Ta), 64A (Tc) 3.8W (Ta), 150W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NVMFS5113PLWFT1G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 150W
- Total Gate Charge (Qg@Vgs) 45nC@4.5V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 4.4nF@25V
- Continuous Drain Current (Id) 64A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 319pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 10.5mΩ@10V,17A
- Package DFN-5(5.9x4.9)
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 14mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 5-DFN (5x6) (8-SOFL)
- Package / Case 8-PowerTDFN, 5 Leads
- Base Part Number NVMFS5
- detail P-Channel 60V 10A (Ta), 64A (Tc) 3.8W (Ta), 150W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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