NTMFS4H01NT3G
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| Manufacturer | onsemi |
| Package | 8-PowerTDFN |
| Datasheet | NTMFS4H01N |
| Description | N-Channel 25V 54A (Ta), 334A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) |
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTMFS4H01NT3G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 125W
- Total Gate Charge (Qg@Vgs) 39nC@4.5V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 5.693nF@12V
- Continuous Drain Current (Id) 334A
- Gate Threshold Voltage (Vgs(th)@Id) 2.1V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 212pF@12V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 0.55mΩ@10V,30A
- Package SO-8FL-EP-5.8mm
- Manufacturer onsemi
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 54A (Ta), 334A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 0.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 5693pF @ 12V
- FET Feature -
- Power Dissipation (Max) 3.2W (Ta), 125W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 5-DFN (5x6) (8-SOFL)
- Package / Case 8-PowerTDFN
- Base Part Number NTMFS4
- detail N-Channel 25V 54A (Ta), 334A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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