FGA40T65UQDF
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| Manufacturer | onsemi |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | FGA40T65UQDF |
| Description | IGBT NPT 650V 80A 231W Through Hole TO-3PN |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi FGA40T65UQDF
- Package TO-3P
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- IGBT Type NPT
- Voltage - Collector Emitter Breakdown (Max) 650V
- Current - Collector (Ic) (Max) 80A
- Current - Collector Pulsed (Icm) 120A
- Vce(on) (Max) @ Vge, Ic 1.67V @ 15V, 40A
- Power - Max 231W
- Switching Energy 989µJ (on), 310µJ (off)
- Input Type Standard
- Gate Charge 306nC
- Td (on/off) @ 25°C 32ns/271ns
- Test Condition 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr) 89ns
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-3P-3, SC-65-3
- Supplier Device Package TO-3PN
- Base Part Number FGA40
- detail IGBT NPT 650V 80A 231W Through Hole TO-3PN
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