FDPF51N25YDTU
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| Manufacturer | onsemi |
| Package | TO-220-3 Full Pack, Formed Leads |
| Datasheet | FDP51N25, FDPF51N25 |
| Description | N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming) |
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDPF51N25YDTU
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 38W
- Total Gate Charge (Qg@Vgs) 55nC@10V
- Drain Source Voltage (Vdss) 250V
- Input Capacitance (Ciss@Vds) 2.62nF@25V
- Continuous Drain Current (Id) 51A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 63pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 48mΩ@10V,25.5A
- Package TO-220
- Manufacturer onsemi
- Series UniFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 60mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 3410pF @ 25V
- FET Feature -
- Power Dissipation (Max) 38W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220F-3 (Y-Forming)
- Package / Case TO-220-3 Full Pack, Formed Leads
- Base Part Number FDPF5
- detail N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming)
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