فروشنده های FQA16N50-F109
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مشخصات FQA16N50-F109
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 320mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
- FET Feature -
- Power Dissipation (Max) 200W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-3P
- Package / Case TO-3P-3, SC-65-3
- Base Part Number FQA1
- detail N-Channel 500V 16A (Tc) 200W (Tc) Through Hole TO-3P
فروشنده های FQA16N50-F109
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