HGTP7N60A4-F102
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Manufacturer | onsemi |
Package | TO-220-3 |
Datasheet | HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 |
Description | IGBT 600V 34A 125W Through Hole TO-220-3 |
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مشخصات HGTP7N60A4-F102
- RoHS true
- Category Triode/MOS Tube/Transistor/IGBTs
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600V
- Current - Collector (Ic) (Max) 34A
- Current - Collector Pulsed (Icm) 56A
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
- Power - Max 125W
- Switching Energy 55µJ (on), 150µJ (off)
- Input Type Standard
- Gate Charge 60nC
- Td (on/off) @ 25°C 11ns/100ns
- Test Condition 390V, 7A, 25Ohm, 15V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number HGTP7N60
- detail IGBT 600V 34A 125W Through Hole TO-220-3
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