NVB110N65S3F

NVB110N65S3F

650V 30A 93mΩ@10V,15A 240W N Channel D2PAK MOSFETs ROHS

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مشخصات فنی:
Manufacturer onsemi
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet NVB110N65S3F
Description N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount D²PAK-3 (TO-263-3)

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NVB110N65S3F
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 240W
  • Total Gate Charge (Qg@Vgs) 58nC@10V
  • Drain Source Voltage (Vdss) 650V
  • Input Capacitance (Ciss@Vds) 2.56nF@400V
  • Continuous Drain Current (Id) 30A
  • Gate Threshold Voltage (Vgs(th)@Id) 5V@740uA
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 93mΩ@10V,15A
  • Package D2PAK
  • Manufacturer onsemi
  • Series FRFET®, SuperFET® III
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 650V
  • Current - Continuous Drain (Id) @ 25°C 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 110mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id 5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 400V
  • FET Feature -
  • Power Dissipation (Max) 240W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package D²PAK-3 (TO-263-3)
  • Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number NVB110
  • detail N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount D²PAK-3 (TO-263-3)

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