FCH190N65F-F085
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| Manufacturer | ON Semiconductor |
| Package | TO-247-3 |
| Datasheet | FCH190N65F_F085 |
| Description | N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3 |
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مشخصات FCH190N65F-F085
- Manufacturer ON Semiconductor
- Series Automotive, AEC-Q101, SuperFET® II
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 190mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 3181pF @ 25V
- FET Feature -
- Power Dissipation (Max) 208W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Package / Case TO-247-3
- Base Part Number FCH19
- detail N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3
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