FDB2532-F085
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FDB2532-F085 |
| Description | N-Channel 150V 79A (Tc) 310W (Tc) Surface Mount TO-263AB |
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مشخصات FDB2532-F085
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDB2532-F085
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 310W
- Total Gate Charge (Qg@Vgs) 87nC@0~10V
- Drain Source Voltage (Vdss) 150V
- Input Capacitance (Ciss@Vds) 5.81nF@25V
- Continuous Drain Current (Id) 79A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 135pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 14mΩ@10V,33A
- Package TO-263
- Manufacturer onsemi
- Series Automotive, AEC-Q101, PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Discontinued at Digi-Key
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 150V
- Current - Continuous Drain (Id) @ 25°C 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 16mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 5870pF @ 25V
- FET Feature -
- Power Dissipation (Max) 310W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package TO-263AB
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FDB253
- detail N-Channel 150V 79A (Tc) 310W (Tc) Surface Mount TO-263AB
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