NTP75N06
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | NTP75N06, NTB75N06 |
| Description | N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220AB |
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تغییرات قیمت
مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 9.5mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.4W (Ta), 214W (Tj)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Base Part Number NTP75N
- detail N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220AB
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