MPSW45A
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 Long Body |
| Datasheet | MPSW45(A) |
| Description | Bipolar (BJT) Transistor NPN - Darlington 40V 1A 100MHz 1W Through Hole TO-92 (TO-226) |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type NPN - Darlington
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA, 5V
- Power - Max 1W
- Frequency - Transition 100MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 Long Body
- Supplier Device Package TO-92 (TO-226)
- Base Part Number MPSW45
- detail Bipolar (BJT) Transistor NPN - Darlington 40V 1A 100MHz 1W Through Hole TO-92 (TO-226)
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