EMD5DXV6T1
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| Manufacturer | ON Semiconductor |
| Package | SOT-563, SOT-666 |
| Datasheet | EMD5DXV6 |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Resistor - Base (R1) 4.7kOhms, 47kOhms
- Resistor - Emitter Base (R2) 10kOhms, 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) 500nA
- Frequency - Transition -
- Power - Max 500mW
- Mounting Type Surface Mount
- Package / Case SOT-563, SOT-666
- Supplier Device Package SOT-563
- Base Part Number EMD5DX
- detail Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
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